| PART |
Description |
Maker |
| BU2522AF BU2522AF/B |
TRANSISTOR ISOLATED SOT199 晶体管隔震SOT199
Silicon Diffused Power Transistor
|
NXP Semiconductors N.V.
Philips
|
| UML6N |
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
General purpose transistor (isolated transistor and diode)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| US5L91 |
General purpose transistor (isolated transistor and diode)
|
Rohm
|
| US5L10 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| FML9_1 FML9 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| QSL11 |
General purpose transistor (isolated transistor and diode)
|
ROHM[Rohm]
|
| PHX1N50E |
PowerMOS transistor Isolated version fo PHP1N50E
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| EMD3008 |
General purpose transistor (isolated transistors)
|
Rohm
|
| EMD30 |
General purpose transistor (isolated transistors)
|
ROHM[Rohm]
|
| PHX1N40E |
PowerMOS transistor Isolated version of PHP2N40E
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| EMT1 UMT1N1 |
General Purpose Transistor (Isolated Dual Transistors)
|
Rohm
|
